Light emitting diode with low-temperature solder layer
US6586875B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Nov 22, 2000 |
| Grant date | Jul 1, 2003 |
| Priority date | — |
| Expiry date | May 29, 2021 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
Abstract
A light emitting diode (LED) is disclosed. An emitting light absorbed by a substrate can be prevented by using a metal with high conductibility and high reflectivity and a bonding process can be produced at a lower temperature and a better welding performance can be obtained by using a solder layer could be fused into a liquid-state. Furthermore, an industry standard vertical LED chip structure is provided and only, requiring a single wire bond that results in easy LED assembly and the manufacture cost can be reduced. An LED chip size can be greatly reduced and with good heat dissipation, therefore the LED has better reliability performance and can be operated at much higher current.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.