Patent · US Expired

Electro-optic electric field probe

US6587258B1 · kind B1 · utility

10Cited by
4References
20Claims
0Family size

Assignee

Inventor

Key dates

Filing dateMar 23, 2001
Grant dateJul 1, 2003
Priority date
Expiry dateDec 16, 2021

Classification

  • Technology area (CPC G)Physics
  • CPC primaryG01R31/311
  • WIPO fieldMeasurement
  • WIPO sectorInstruments

Abstract

A non-invasive electro-optic probe and probe method for probing electric fields in semiconductor devices comprising directing laser output at a semiconductor device to be probed employing a laser having an operating wavelength such that photon energy of a second harmonic wavelength of the operating wavelength is below the band gap of a semiconductor comprised by the semiconductor device and detecting second harmonic wavelength but not operating wavelength radiation from the semiconductor device.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.