Electro-optic electric field probe
US6587258B1 · kind B1 · utility
Assignee
Inventor
Key dates
| Filing date | Mar 23, 2001 |
| Grant date | Jul 1, 2003 |
| Priority date | — |
| Expiry date | Dec 16, 2021 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG01R31/311
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
A non-invasive electro-optic probe and probe method for probing electric fields in semiconductor devices comprising directing laser output at a semiconductor device to be probed employing a laser having an operating wavelength such that photon energy of a second harmonic wavelength of the operating wavelength is below the band gap of a semiconductor comprised by the semiconductor device and detecting second harmonic wavelength but not operating wavelength radiation from the semiconductor device.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.