Method for the manufacture of a substrate, substrate manufactured in accordance with this method, carrier wafer and diamond jewel
US6589333B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 18, 2000 |
| Grant date | Jul 8, 2003 |
| Priority date | — |
| Expiry date | Sep 18, 2020 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S117/918
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A method is described for the production of a suitable substrate for the subsequent growth of a mono-crystalline diamond layer. This method includes the following steps:Selection of a substrate of a mono-crystalline material having a fixed lattice constant (aSi) or with a layer consisting of such a material.Manufacture of a strained silicon layer with foreign material atoms incorporated at substitutional lattice sites on the mono-crystalline material of the substrate.Transfer of the strained layer into an at least partly relaxed state in which it adopts by relaxation and through the selected foreign material concentration a lattice constant (aSi(C) which satisfies the condition n.aSi(C)=m.aD, wherein n and m are integers and aD is the lattice constant of diamond, with the relaxed layer forming the substrate or substrate surface for the epitaxial growth.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.