Method of adjusting the flatness of a slider using selective plasma etching
US6589436B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 14, 2000 |
| Grant date | Jul 8, 2003 |
| Priority date | — |
| Expiry date | Dec 12, 2020 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T29/49041
- WIPO fieldAudio-visual technology
- WIPO sectorElectrical engineering
Abstract
Provided is a reactive ion etching (RIE) method for use in altering the flatness of a slider, whereby a slider or row of sliders is placed within a RIE apparatus. The apparatus comprises essentially an electrode within a chamber having an inlet and an outlet. The electrode is controlled by a bias power source. A source power is provided to the chamber to generate the plasma, wherein a gas or gas mixture is first introduced to the chamber and the source power is adjusted to maximize the plasma composition of ions and reactive neutral species. The ions and reactive neutral species are generated from reactive chemical species such as CHF3 and other F-containing species. An inert gas such as Argon may also be present. Typically, TiC within the Al2O3 matrix of the slider substrate surface is etched at a faster rate than other substrate species.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.