Methods of processing semiconductor wafer and producing IC card, and carrier
US6589855B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Nov 26, 2001 |
| Grant date | Jul 8, 2003 |
| Priority date | — |
| Expiry date | Nov 26, 2021 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/3511
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The semiconductor wafer is made thin without any cracks and warp under good workability. The semiconductor wafer thinning process includes the first step of preparing a carrier 1 formed of a base 1a and a suction pad 1b provided on one surface of the base 1a or formed of a base film with an adhesive, the second step of bonding a semiconductor wafer to the carrier 1 in such a manner that a rear surface of the semiconductor wafer 2 with no circuit elements formed therein is opposite to the carrier to form a wafer composite 10, and the third step of holding the carrier of the wafer composite 10 with its semiconductor wafer 2 side up and spin-coating an etchant on the rear surface of the semiconductor wafer 2 thereby to make the semiconductor wafer 2 thin.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.