Solid-state image sensor with reduced smear and noise
US6590195B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Apr 26, 2001 |
| Grant date | Jul 8, 2003 |
| Priority date | — |
| Expiry date | Oct 22, 2021 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F39/80
Abstract
A solid-state image sensor includes a semiconductor bulk region of a first conductivity type; at least a drain region of a second conductivity type selectively provided in the semiconductor bulk region; at least a photoelectric converter region of the second conductivity type selectively provided in the semiconductor bulk region, and the photoelectric converter region being separated from the drain region; and at least a potential barrier region of the first conductivity type selectively provided in the semiconductor bulk region, the potential barrier region being adjacent to at least a part of bottom and side faces of the photoelectric converter region, and the potential barrier region having a higher impurity concentration than the semiconductor bulk region.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.