Method of manufacturing unipolar components

US6590240B1 · kind B1 · utility

Assignee

• STMicroelectronics SA

Inventor

• Frederic Lanois · Tours, FR

Key dates

• Filing date: Jul 28, 2000
• Grant date: Jul 8, 2003
• Expiry date: Jul 28, 2020

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D30/0291

Abstract

A method of manufacturing a unipolar component of vertical type in a substrate of a first conductivity type, including the steps of: forming trenches in a silicon layer of the first conductivity type; coating the lateral walls of the trenches with a silicon oxide layer; filling the trenches with polysilicon of the second conductivity type; and annealing to adjust the doping level of the polysilicon, the excess dopants being absorbed by the silicon oxide layer.