Barrier layer and method of making the same
US6590913B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | May 14, 1999 |
| Grant date | Jul 8, 2003 |
| Priority date | — |
| Expiry date | May 14, 2019 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S5/0237
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A barrier layer is formed within a microfabricated device, such as a semiconductor laser assembly. The barrier layer is used to separate bonding material from an underlying layer that is located beneath the barrier layer. The barrier layer includes at least three thin layers that have alternating levels of electronegativity. Therefore, a significant amount of intermetallics are formed between the thin layers, thereby creating strong bonds between the thin layers at relatively low temperatures. It is difficult for the bonding material to break the strong bonds of the thin layers, and the bonding material is, therefore, prevented from penetrating the barrier layer and reacting with the underlying layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.