Method for fabricating a wave division laser array multiplexer
US6590916B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Feb 8, 2001 |
| Grant date | Jul 8, 2003 |
| Priority date | — |
| Expiry date | May 26, 2021 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S5/042
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
An IC laser array package is provided wherein standard CMOS integrated circuit (IC) processes are used for fabricating the controller for the laser array and wherein p-channel MOSFET devices are used as switches with the controller which short the anode of the selected laser in the array (connected to the drain of the p-channel MOSFET switches) to ground. In this structure, the modulating signal from the driver input can be applied to the common cathode substrate of the laser array bar in a standard package, along with a negative dc bias current provided from the negative voltage dc bias package pin through an inductor, in the same built-in bias tee manner previously used with a standard single-laser 14-pin package. Because the p-channel MOSFETs are used only as switches, their ft values are typically not a material hindrance to the circuit operation.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.