System and method for modifying enclosed areas for ion beam and laser beam bias effects
US6591154B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 15, 2000 |
| Grant date | Jul 8, 2003 |
| Priority date | — |
| Expiry date | Jul 27, 2021 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/67288
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A system and method for repairing defects in semiconductor wafers utilizing a repair tool including a device for applying energy to obliterate defects at locations on the wafer, the method being a graphical approach implementing a graphical user interface (GUI) comprising a pixel screen display and comprising the steps of: via the interface, identifying a wafer defect to repair and enclosing the defect within a polygonal repair outline drawn using a default line thickness; graphically adjusting the line thickness to modify the enclosed polygonal repair outline area; automatically detecting one or more areas within an interior region of the modified polygonal repair outline area; and, scanning the modified polygonal repair outline, and for each pixel location inside the one or more detected areas, applying energy to the wafer coordinated to the pixel location for repairing the defect, whereby the identification of said pixel location is accomplished using standard graphical tools with minimal operator intervention.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.