Method of manufacturing magnetoresistive device and method of manufacturing thin-film magnetic head
US6591481B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 3, 2001 |
| Grant date | Jul 15, 2003 |
| Priority date | — |
| Expiry date | Aug 3, 2021 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T29/49052
- WIPO fieldAudio-visual technology
- WIPO sectorElectrical engineering
Abstract
A magnetoresistive device comprises a magnetoresistive element, two bias field applying layers that apply a longitudinal bias magnetic field to the magnetoresistive element, and two electrode layers that are located adjacent to one of the surfaces of each of the bias field applying layers and overlap one of the surfaces of the magnetoresistive element. The magnetoresistive element incorporates a protection layer located on a soft magnetic layer. A sacrificial coating layer is formed on the protection layer. Before forming the electrode layers, the coating layer and an oxide layer, formed through natural-oxidizing part of the top surface of the coating layer, are removed through etching. After the electrode layers are formed, the portion of the protection layer located in the region between the two electrode layers is oxidized, and a high resistance layer is thereby formed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.