Method for measuring thermal diffusivity and interface thermal resistance
US6592252B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Oct 17, 2001 |
| Grant date | Jul 15, 2003 |
| Priority date | — |
| Expiry date | Oct 17, 2021 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG01N25/18
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
A non-metal film whose thermophysical properties are unknown is disposed between a first metal film and a second metal film, thereby forming a sample having a three-layer structure. The metal films have predetermined known thermophysical properties, belong to the same sort of substance and have the same thickness. The three-layer substance is disposed on a transparent substrate and is heated from below the second metal film, using a picosecond light pulse coming from below and passing through the transparent substrate. The light pulse used in the irradiation is converted into heat in the second metal film during only one picosecond, with such heat diffusing through interface/non-metal film layer/interface and thus arriving at the first metal film. By measuring a temperature change on the surface of the first metal film, it is possible to perform correct measurement by using the thermoreflectance method formerly suggested in a patent application by the inventors of the present invention.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.