Production of a GaN bulk crystal substrate and a semiconductor device formed on a GaN bulk crystal substrate
US6592663B1 · kind B1 · utility
87Cited by
3References
51Claims
0Family size
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Key dates
| Filing date | Jun 8, 2000 |
| Grant date | Jul 15, 2003 |
| Priority date | — |
| Expiry date | Oct 21, 2020 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T428/2982
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A method of making a bulk crystal substrate of a GaN single crystal includes the steps of forming a molten flux of an alkali metal in a reaction vessel and causing a growth of a GaN single crystal from the molten flux, wherein the growth is continued while replenishing a compound containing N from a source outside the reaction vessel.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.