Tailoring nanocrystalline diamond film properties
US6592839B2 · kind B2 · utility
36Cited by
9References
33Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Feb 23, 1999 |
| Grant date | Jul 15, 2003 |
| Priority date | — |
| Expiry date | Feb 23, 2019 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J9/025
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A method for controlling the crystallite size and growth rate of plasma-deposited diamond films. A plasma is established at a pressure in excess of about 55 Torr with controlled concentrations of hydrogen up to about 98% by volume, of unsubstituted hydrocarbons up to about 3% by volume and an inert gas of one or more of the noble gases and nitrogen up to about 98% by volume. The volume ratio of inert gas to hydrogen is preferably maintained at greater than about 4, to deposit a diamond film on a suitable substrate. The diamond film is deposited with a predetermined crystallite size and at a predetermined growth rate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.