Methods and apparatus for depositing magnetic films
US6593150B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 30, 2002 |
| Grant date | Jul 15, 2003 |
| Priority date | — |
| Expiry date | Sep 30, 2022 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01F41/18
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
Methods and systems are provided for depositing a magnetic film using one or more long throw magnetrons, and in some embodiments, an ion assist source and/or ion beam source. The long throw magnetrons are used to deposit particles at low energy and low pressure, which can be useful when, for example, depositing interfacial layers or the like. An ion assist source can be added to increase the energy of the particles provided by the long throw magnetrons, and/or modify or clean the layers on the surface of the substrate. An ion beam source can also be added to deposit layers at a higher energies and lower pressures to, for example, provide layers with increased crystallinity. By using a long throw magnetron, an ion assist source and/or an ion beam source, magnetic films can be advantageously provided.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.