Silicon photoelectric conversion device, method of manufacturing the same and method of processing the same
US6593164B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jul 12, 2002 |
| Grant date | Jul 15, 2003 |
| Priority date | — |
| Expiry date | Jul 12, 2022 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02P70/50
Abstract
A cyano process of introducing cyano ions (CN−) into an amorphous silicon layer is performed after the amorphous silicon layer has been formed over a substrate or after the layer has been exposed to light. For example, the substrate is immersed in an aqueous solution containing potassium cyanide (KCN) in a vessel. The cyano process eliminates factors (e.g., weak bonds, defects, and centers of recombination) of decrease in photoconductivity of the as-deposited amorphous silicon thin film, which are identifiable in the as-deposited film. As a result, the photoconductivity of the amorphous silicon layer is already higher than usual from the beginning and will hardly decrease even upon exposure to light.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.