Low defect density, thin-layer, SOI substrates
US6593173B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Nov 28, 2000 |
| Grant date | Jul 15, 2003 |
| Priority date | — |
| Expiry date | Nov 28, 2020 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76243
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Methods of producing buried insulating layers in semiconductor substrates are disclosed whereby a dose of selected ions is implanted into a substrate to form a buried precursor layer below an upper layer of the substrate, followed by oxidation of the substrate in an atmosphere having a selected oxygen concentration to form an oxide surface layer. The oxidation is performed at a temperature and for a time duration such that the formation of the oxide layer causes the injection of a controlled number of atoms of the substrate from a region proximate to an interface between the newly formed oxide layer and the substrate into the upper regions of the substrate to reduce strain. A high temperature annealing step is then performed to produce the insulating layer within the precursor layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.