Method of manufacturing semiconductor device
US6593180B1 · kind B1 · utility
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1References
13Claims
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Key dates
| Filing date | Nov 8, 2000 |
| Grant date | Jul 15, 2003 |
| Priority date | — |
| Expiry date | Nov 8, 2020 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D1/694
Abstract
A method of manufacturing semiconductor device comprises the step of forming the transistor in the semiconductor substrate, the step of forming the capacitor conducting to the transistor, and the step of forming the insulating film to cover the transistor and the capacitor; and the step of sintering the semiconductor substrate in an atmosphere including the mixture of hydrogen, nitrogen and oxygen gases.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.