Method of manufacturing a semiconductor component and semiconductor component thereof
US6593199B1 · kind B1 · utility
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3References
29Claims
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Assignee
Inventors
Key dates
| Filing date | Feb 27, 2002 |
| Grant date | Jul 15, 2003 |
| Priority date | — |
| Expiry date | Feb 27, 2022 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02532
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of manufacturing a semiconductor component includes providing a substrate (110) having a first doping concentration and growing an epitaxial layer (120, 520) over the substrate. The epitaxial layer has a second doping concentration lower than the first doping concentration, and the epitaxial layer has at least two effective, as-grown thicknesses. The resulting composite substrate is suitable for an integrated circuit having both high and low voltage portions.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.