Semiconductor substrate and method for producing the same
US6593211B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Sep 3, 1999 |
| Grant date | Jul 15, 2003 |
| Priority date | — |
| Expiry date | Sep 3, 2019 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76259
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
There are disclosed a semiconductor substrate having a non-porous monocrystalline layer with reduced crystal defects on a porous silicon layer and a method of forming the substrate.The forming method comprises a heat treatment step of heat-treating a porous silicon layer in an atmosphere not containing a silicon-based gas and the step of growing a non-porous monocrystalline layer on the porous silicon layer, wherein the heat treatment is conducted under the conditions such that the etched thickness of the silicon layer is 2 nm or less and that the rate of change r of the surface pore density of the porous silicon layer (r=surface pore density after heat treatment/surface pore density before heat treatment) satisfies the relationship 1/10000≦r≦1.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.