Transparent electrode comprising ZnO and a film with a melting point lower than that of ZnO
US6593593B2 · kind B2 · utility
4Cited by
4References
3Claims
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Assignee
Inventors
Key dates
| Filing date | Jan 3, 2001 |
| Grant date | Jul 15, 2003 |
| Priority date | — |
| Expiry date | Jan 3, 2021 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02P70/50
Abstract
This invention provides a patterning method for a transparent electrode capable of preventing heat damages and insulation failure or the like even when a ZnO film is used. An ITO film 3 is formed on a transparent substrate 1 by sputtering and the ZnO film 4 is formed on the ITO film 3 by sputtering. Then, regions to be irradiated of the ITO film 3 and the ZnO film 4 are eliminated and patterned by Nd-YAG laser irradiation.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.