Responsive bidirectional static switch

US6593600B1 · kind B1 · utility

Assignee

• STMicroelectronics SA

Inventors

• Franck Duclos · Tours, FR
• Jean-Michel Simonnet · Véretz, FR
• Olivier Ladiray · Saint-Avertin, FR

Key dates

• Filing date: Aug 8, 2000
• Grant date: Jul 15, 2003
• Expiry date: Aug 8, 2020

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D18/80

Abstract

A monolithic bidirectional switch formed in a semiconductor substrate of type N, including a first main vertical thyristor, the rear surface layer of which is of type P, a second main vertical thyristor, the rear surface layer of which is of type N, an auxiliary vertical thyristor, the rear surface layer of which is of type P and is common with that of the first main thyristor, a peripheral region of type P especially connecting the rear surface layer of the auxiliary thyristor to the layer of this thyristor located on the other side of the substrate, a first metallization on the rear surface side, a second metallization on the front surface side connecting the front surface layers of the first and second thyristors. An additional region has a function of isolating the rear surface of the auxiliary thyristor and the first metallization.