Semiconductor device and method of manufacturing the same
US6593634B2 · kind B2 · utility
Assignees
Inventors
Key dates
| Filing date | Apr 12, 2001 |
| Grant date | Jul 15, 2003 |
| Priority date | — |
| Expiry date | Apr 12, 2021 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D86/00
Abstract
A semiconductor device includes an NMOSFET and a PMOSFET. Each MOSFET includes first and second impurity diffusion layers for forming a source region and a drain region which are formed in a silicon layer of an SOI substrate or the like, a channel region formed between the first and second impurity diffusion layers, a gate insulation layer at least formed on the channel region, and a gate electrode formed on the gate insulation layer. The gate electrode includes a tantalum nitride layer in a region in contact with at least the gate insulation layer. The semiconductor device exhibits high current drive capability and can be manufactured at high yield.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.