Method of monitoring thin-film processes and metrology tool thereof
US6594025B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jul 12, 2001 |
| Grant date | Jul 15, 2003 |
| Priority date | — |
| Expiry date | Jul 30, 2021 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG01N21/8422
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
The present invention provides a method for monitoring a modifying-process taking place in a thin-film sample and thereby characterizing the sample thus modified, wherein the modifying-process is performed for purpose of improving physical properties of the sample. The present invention further provides a monitoring tool for characterizing various thin-film processes. Advantages of the method of the present invention are manifest in its non-intrusive nature, fast (or real-time) response, robust sensitivity, and versatility in a variety of thin-film processes. Another inherent advantage of the present invention is that an assortment of the “n&k” parameters can be obtained by using only measurement tool, in contrast to two (or more) simultaneous measurement tools used in the prior art.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.