Magnetoresistive element and magnetic memory element and magnetic head using the same
US6594120B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | May 23, 2001 |
| Grant date | Jul 15, 2003 |
| Priority date | — |
| Expiry date | Dec 6, 2021 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T428/1107
- WIPO fieldMicro-structural and nano-technology
- WIPO sectorChemistry
Abstract
The present invention provides a magnetoresistive element in which discontinuity at a barrier layer interface is provided by utilizing a layered-perovskite oxide, and a device in which the foregoing magnetoresistive element is used. The element of the present invention includes a layered-perovskite oxide having a composition expressed by a formula L2(A1−zRz)2An−1MnO3n+3+x and including a (L-O)2 layer in its crystalline structure, and a pair of ferromagnetic bodies formed in contact with the layer perovskite oxide so as to sandwich the oxide. In response to bias application via the (L-O)2 layer, a magnetoresistive tunnel effect appears. In the foregoing formula, A represents at least one alkaline earth element selected from the group consisting of Ca, Sr, and Ba, L represents at least one element selected from the group consisting of Bi, Tl, and Pb, M represents at least one element selected from the group consisting of Ti, V, Cu, Ru, Ni, Mn, Co, Fe, and Cr, R represents a rare earth element, n is 1, 2, or 3, and x and z are numerical values satisfying −1≦x≦1, and 0≦z<1, respectively.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.