Semiconductor laser with disordered and non-disordered quantum well regions
US6594295B1 · kind B1 · utility
2Cited by
26References
7Claims
0Family size
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Key dates
| Filing date | Nov 16, 2001 |
| Grant date | Jul 15, 2003 |
| Priority date | — |
| Expiry date | Nov 16, 2021 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S5/3413
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
In a semiconductor laser, non-disordered quantum well active region functions as a lasing region. Surrounding the non-disordered quantum well active region is a disordered quantum well active region which prevents diffusion of injected carriers from the non-disordered quantum well active region or provides a lateral heterobarrier. The disordered quantum well active region is formed by rapid thermal annealing in which defects from one or two InP defect layers diffuse into the parts of the quantum well active region to be disordered.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.