Structure and method of fabrication for an optical switch
US6594414B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jul 25, 2001 |
| Grant date | Jul 15, 2003 |
| Priority date | — |
| Expiry date | Jul 25, 2021 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02521
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A structure for an optical switch includes a reflective layer formed over a high quality epitaxial layer of piezoelectric compound semiconductor materials grown over a monocrystalline substrate, such as a silicon wafer. The piezoelectric layer can be activated to alter the path of light incident on the reflective layer. A compliant substrate is provided for growing the monocrystalline compound semiconductor layer. An accommodating buffer layer comprises a layer of monocrystalline oxide spaced apart from a silicon wafer by an amorphous interface layer of silicon oxide. The amorphous interface layer dissipates strain and permits the growth of a high quality monocrystalline oxide accommodating buffer layer. The accommodating buffer layer is lattice matched to both the underlying silicon wafer and the overlying piezoelectric monocrystalline material layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.