Method for unique determination of FET equivalent circuit model parameters
US6594594B1 · kind B1 · utility
4Cited by
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25Claims
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Key dates
| Filing date | Oct 5, 2000 |
| Grant date | Jul 15, 2003 |
| Priority date | — |
| Expiry date | Jan 25, 2021 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG01R31/2621
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
A method of uniquely extracting both intrinsic and parasitic components from a single set of measured S-parameters is useful for extracting a single set of measured S-parameters for the development of non-linear Field Effect Transistor (FET) models. Competitive extraction where multiple trial solutions are attempted spanning a region or space of feedback impedances is used. Extraction is followed by optimization that reduces the extracted values to a model that better fits measured S-parameters. Optimization can be achieved by further evaluating the speed of convergence in an error metric.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.