Photomask and method for correcting feature size errors on the same
US6596444B2 · kind B2 · utility
16Cited by
20References
26Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | May 10, 2001 |
| Grant date | Jul 22, 2003 |
| Priority date | — |
| Expiry date | Aug 18, 2021 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG03F1/36
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A method for correcting pattern errors on a photomask is disclosed. The method includes determining a proximity effect caused by a first feature on a second feature in a pattern data file. The total line edge length is calculated for the first feature and a dimension of the second feature is modified based on the total line edge length calculated or the first feature.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.