Methods of preventing reduction of IrOx during PZT formation by metalorganic chemical vapor deposition or other processing
US6596547B2 · kind B2 · utility
12Cited by
3References
24Claims
0Family size
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Key dates
| Filing date | Dec 21, 2001 |
| Grant date | Jul 22, 2003 |
| Priority date | — |
| Expiry date | Dec 21, 2021 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D1/682
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A method of fabricating a ferroelectric capacitor is disclosed. The method comprises decreasing a reduction in a bottom electrode material during formation of the ferroelectric dielectric portion of the capacitor. The method comprises forming an oxygen doped iridium layer and forming a ferroelectric dielectric layer thereover. During the formation of the ferroelectric, the oxygen doped iridium layer converts to an iridium oxide layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.