Body-tied-to-source partially depleted SOI MOSFET
US6596554B2 · kind B2 · utility
16Cited by
1References
1Claims
0Family size
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Key dates
| Filing date | Nov 27, 2001 |
| Grant date | Jul 22, 2003 |
| Priority date | — |
| Expiry date | Nov 27, 2021 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/6759
Abstract
A silicon-on-oxide MOS transistor is disclosed which has an implanted region on the source side of the gate electrode for making contact with the body node. A contact region of the same conductivity type as the body is formed in the source region with a minimum spacing from the patterned gate corner such that the dopant of the implant region does not diffuse into the gate and thereby destroy the transistor
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.