Semiconductor device, surface emitting semiconductor laser and edge emitting semiconductor laser
US6597017B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 7, 2000 |
| Grant date | Jul 22, 2003 |
| Priority date | — |
| Expiry date | Mar 7, 2020 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S2304/04
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
Provided is a semiconductor device that has pseudo lattice matched layers with good crystallinity, formed with lattice mismatched materials. Tensile-strained n-type Al0.5Ga0.5N layers (lower side) and compressive-strained n-type Ga0.9In0.1N layers (upper side) are grown on a GaN crystal layer substrate in 16.5 periods to form an n-type DBR mirror; an undoped GaN spacer layer and an active region are grown on the n-type DBR mirror; and an undoped a GaN spacer layer is grown on the active region. Further, tensile-strained p-type Al0.5Ga0.5N layers (lower side) and compressive-strained p-type Ga0.9In0.1N layers (upper side) are grown on the spacer layer in 12 periods to form a p-type DBR mirror and eventually complete a surface emitting semiconductor laser.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.