Light sensitive semiconductor component

US6597025B2 · kind B2 · utility

Assignee

• KONINKLIJKE PHILIPS ELECTRONICS NV · NL

Inventors

• Josef Lauter · Geilenkirchen, DE
• Armin Kemna · Duisburg, DE
• Werner Brockherde · Duisburg, DE
• Ralf Hausschild · Solingen, DE

Key dates

• Filing date: Mar 12, 2002
• Grant date: Jul 22, 2003
• Expiry date: Mar 12, 2022

Classification

• Technology area (CPC Y): Emerging Cross-Sectional Technologies
• CPC primary: Y02E10/50

Abstract

The invention relates to a light-sensitive semiconductor component that consists of pixels (1), wherein n doped dot zones (7) are provided, in a preferably hexagonal pattern, on the surface of a p doped channel region, the dot zones (7) of a pixel (1) being electrically connected to one another by means of leads (6) and to a collecting lead (4). The dot zones (7) form parallel connected semiconductor diodes whereby minority charge carriers that are generated by the incidence of light in the channel region can be detected after having traveled to the dot zones (7) by diffusion. The described arrangement enables a high sensitivity to be achieved throughout the channel region and also a minimum capacitance of the semiconductor constructed by means of the CMOS technique. Diffusion of charge carriers out of a pixel is prevented by a guard ring (3) of an opposed type of doping.