Magnetoresistive device with an &agr;-Fe2O3 antiferromagnetic film and indirect exchange coupling film layers of differing thickness
US6597547B1 · kind B1 · utility
17Cited by
11References
8Claims
0Family size
Assignee
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Key dates
| Filing date | Sep 28, 1998 |
| Grant date | Jul 22, 2003 |
| Priority date | — |
| Expiry date | Sep 28, 2018 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11B2005/3996
- WIPO fieldAudio-visual technology
- WIPO sectorElectrical engineering
Abstract
A magnetoresistance effect device of the present invention includes a multilayer film. The multilayer film includes an antiferromagnetic film, a first ferromagnetic film, a non-magnetic film and a second ferromagnetic film, which are provided in this order on a non-magnetic substrate directly or via an underlying layer. The antiferromagnetic film comprises an &agr;-Fe2O3 film. A surface roughness of the multilayer film is about 0.5 nm or less.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.