Patent · US Expired

Power semiconductor module

US6597585B2 · kind B2 · utility

11Cited by

3References

18Claims

0Family size

Assignee

EUPEC Europaeische Gesellschaft fur Leistungshalbleiter mbH · DE

Inventors

Gottfried Ferber · Warstein, DE
Reimund Pelmer · Soest, DE

Key dates

Filing date	Sep 17, 2001
Grant date	Jul 22, 2003
Priority date	—
Expiry date	Sep 17, 2021

Classification

Technology area (CPC H)Electricity
CPC primaryH05K1/0306
WIPO fieldAudio-visual technology
WIPO sectorElectrical engineering

Abstract

A power semiconductor module includes a plastic housing, a plurality of connection elements for external main connections and control connections, and at least one ceramic substrate which is provided at least on its top side with a structured metalization. The at least one ceramic substrate is fitted with semiconductor components and is inserted into a bottom opening of the plastic housing. The connection elements for the external main connections and control connections are connected by detaching a part of the structured metalization from the at least one ceramic substrate and bending it vertically upward to form a grip tab so that the grip tab can be connected to a connection element through the use of a brazed joint or a welded joint. These measures ensure an excellent stability with regard to fluctuating thermal loads.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.