High anisotropy alloy for thin film disk
US6599642B2 · kind B2 · utility
3Cited by
11References
44Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jan 9, 2001 |
| Grant date | Jul 29, 2003 |
| Priority date | — |
| Expiry date | Aug 17, 2021 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T428/265
- WIPO fieldAudio-visual technology
- WIPO sectorElectrical engineering
Abstract
The thin film disk includes a pre-seed layer of amorphous or nanocrystalline structure which may be AlTi or Alta, and that is deposited upon a disk substrate. The pre-seed layer is followed by the RuAl seed layer, a Cr alloy underlayer, an onset layer composed essentially of CoCr and a magnetic layer. The magnetic layer is comprised of CoPtxCrBy, wherein x is the at. % concentration of Pt, y is the at. % concentration of boron, and x>4+y.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.