Method for manufacturing capacitor of semiconductor device having improved leakage current characteristics
US6599807B2 · kind B2 · utility
16Cited by
12References
17Claims
0Family size
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Key dates
| Filing date | Dec 20, 2001 |
| Grant date | Jul 29, 2003 |
| Priority date | — |
| Expiry date | Dec 20, 2021 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D1/682
Abstract
A method for manufacturing a capacitor of a semiconductor device is provided. The method includes the steps of: forming a first electrode on a semiconductor substrate; forming a dielectric layer on the first electrode; forming a second electrode on the dielectric layer; first annealing the capacitor having the first electrode, the dielectric layer, and the second electrode under oxygen atmosphere; and second annealing the capacitor having the first electrode, the dielectric layer, and the second electrode under vacuum.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.