Floating source modulator for silicon carbide transistor amplifiers
US6600375B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 12, 2001 |
| Grant date | Jul 29, 2003 |
| Priority date | — |
| Expiry date | Sep 12, 2021 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH03F3/191
- WIPO fieldBasic communication processes
- WIPO sectorElectrical engineering
Abstract
A source modulator circuit for an amplifier including a silicon carbide (SiC) static induction transistor (SIT) having a grounded gate, a source and a drain, includes: a source bias voltage supply connected to the source of the transistor; a drain voltage supply connected between the source and drain of the transistor; and a shunt circuit for directing current from the drain voltage supply around the source voltage supply to said source; whereby power dissipation by the source voltage supply is minimized. The shunt circuit includes a field effect transistor (FET) switch responsive to a control signal from a gated feedback operational amplifier for turning on the quiescent current of the SIT and setting the voltage applied to the source to a desired source voltage level.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.