Optical proximity correction verification mask
US6602642B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 29, 2001 |
| Grant date | Aug 5, 2003 |
| Priority date | — |
| Expiry date | Aug 29, 2021 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG06K7/0095
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
An optical proximity correction (OPC) verification mask is disclosed. The mask includes device areas that are separated by scribe lines. One or more OPC test patterns are integrated into the scribe lines for verification purposes. These patterns can include: line-end shortening (LES) patterns, such as serifs and hammerheads added to the ends of lines; corner rounding patterns, such as positive and negative serifs; and, scattering bars (SB's) and anti-scattering bars (ASB's) to compensate for isolated-dense proximity effects and isolated-feature depth of focus reduction. Other OPC patterns may also be included. A method for making the mask, and a semiconductor device created at least in part by a method including use of the mask, are also disclosed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.