Method of manufacturing a semiconductor device having a monitor pattern, and a semiconductor device manufactured thereby
US6602725B2 · kind B2 · utility
6Cited by
7References
7Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Sep 26, 2001 |
| Grant date | Aug 5, 2003 |
| Priority date | — |
| Expiry date | Sep 26, 2021 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The semiconductor device includes a semiconductor wafer which is partitioned into chip regions by scribe line area. A device pattern is formed in the device forming region included in the chip region. A monitor pattern is formed from the same material as that of the device patterns in the chip region simultaneously with the device pattern. An interlayer insulating film is formed in the chip region so as to cover the device pattern and the monitor pattern. The monitor pattern is used to measure the thickness of the interlayer insulating film.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.