Method of producing a semiconductor layer on a substrate
US6602760B2 · kind B2 · utility
Assignees
Inventors
Key dates
| Filing date | Dec 19, 2001 |
| Grant date | Aug 5, 2003 |
| Priority date | — |
| Expiry date | Dec 19, 2021 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76259
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of producing a semiconductor layer onto a semiconductor substrate. The method comprises providing a first semiconductor substrate, and providing a second semiconductor substrate. The method also comprises producing a porous layer, which has a porosity profile, on top of the first semiconductor substrate, and producing a porous layer, which has a porosity profile, on top of the second semiconductor substrate. The method further comprises bringing the porous layer of the second substrate into contact with the porous layer of the first substrate, so as to form a bond between the two substrates, performing a thermal annealing step, and lifting off of the second substrate, leaving a layer of the second substrate's semiconductor material attached to the first substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.