Deposition of titanium amides
US6602783B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 29, 2000 |
| Grant date | Aug 5, 2003 |
| Priority date | — |
| Expiry date | Sep 29, 2020 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC23C16/4402
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
The present invention is a process for enhancing the chemical vapor deposition of titanium nitride from a titanium containing precursor selected from the group consisting of tetrakis(dimethylamino)titanium, tetrakis(diethylamino)titanium and mixtures thereof, reacted with ammonia to produce the titanium nitride on a semiconductor substrate by the addition of organic amines, such as dipropylamine, in a range of approximately 10 parts per million by weight to 10% by weight, preferably 50 parts per million by weight to 1.0 percent by weight, most preferably 100 parts per million by weight to 5000 parts per million by weight to the titanium containing precursor wherein prior to the reaction, said titanium containing precursor is subjected to a purification process to remove hydrocarbon impurities from the titanium containing precursor. It is shown that addition of small amounts of organic amines enhance the deposition rate of titanium nitride, while the presence of hydrocarbons, such as n-decane, retard the deposition rate of titanium nitride.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.