Method of forming a uniform ultra-thin gate oxide layer
US6602799B2 · kind B2 · utility
3Cited by
5References
19Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Sep 17, 2001 |
| Grant date | Aug 5, 2003 |
| Priority date | — |
| Expiry date | Sep 17, 2021 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02255
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of forming a highly uniform ultra-thin insulating gate oxide layer on a silicon wafer is presented where an oxide layer non-uniformity introduced at a processing temperature is compensated during a cooling step during which oxygen is added to give additional oxide layer growth thereby producing a substantially uniform oxide layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.