Organic semiconductor and method
US6603141B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 28, 2001 |
| Grant date | Aug 5, 2003 |
| Priority date | — |
| Expiry date | Jan 15, 2022 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10K71/60
Abstract
A semiconductor device formed of a flexible or rigid substrate (10) having a gate electrode (11), a source electrode (12), and a drain electrode (13) formed thereon and organic semiconductor material (14) disposed at least partially thereover. With appropriate selection of material, the gate electrode (11) will form a Schottky junction and an ohmic contact will form between the organic semiconductor material (14) and each of the source electrode (12) and drain electrode (13). In many of the embodiments, any of the above elements can be formed through contact or non-contact printing. Sizing of the resultant device can be readily scaled to suit various needs.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.