Semiconductor light emitting device
US6603147B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 2, 2000 |
| Grant date | Aug 5, 2003 |
| Priority date | — |
| Expiry date | Jul 30, 2020 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S5/3211
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A semiconductor light emitting device using nitride III-V compound semiconductors is improved to reduce the threshold current density with almost no increase of the operation voltage. In a GaN semiconductor laser as one version thereof, the p-type cladding layer is made of two or more semiconductor layers different in band gap, and a part of the p-type cladding layer near one of its boundaries nearer to the active layer is made of a semiconductor layer having a large band gap than that of the remainder part. More specifically, in a AlGaN/GaN/GaInN SCH-structured GaN semiconductor laser, a p-type AlGaN cladding layer is made of a p-type Alx1Ga1−x1N layer in contact with a p-type GaN optical guide layer, and a p-type Alx2Ga1−x2N layer overlying the p-type Alx1Ga1−x1N layer (where 0≦x2<x1≦1).
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.