Overvoltage protection device
US6603155B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Apr 4, 2002 |
| Grant date | Aug 5, 2003 |
| Priority date | — |
| Expiry date | Apr 4, 2022 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D8/80
Abstract
A semiconductor device has a PN junction between first and second regions of the device in which in the intended operation of the device reverse breakdown of the junction occurs. The first region is of lower impurity concentration than the second region and a first buried region of the same conductivity type as and of higher impurity concentration than the first region is provided in the first region adjacent to the junction. A second buried region of the same conductivity type as and of higher impurity concentration than the first buried region is provided in the first buried region and one of the first and second buried regions is formed with a plurality of separate regions of small area arranged so that reverse breakdown of the junction preferentially occurs through the second buried region.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.