Double heterostructure photodiode with graded minority-carrier blocking structures
US6603184B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jan 30, 2001 |
| Grant date | Aug 5, 2003 |
| Priority date | — |
| Expiry date | Jan 30, 2021 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02E10/548
- WIPO fieldMicro-structural and nano-technology
- WIPO sectorChemistry
Abstract
An embodiment of a radiation detector includes a semiconductor-based blocking structure interposed between the detector's absorption region and at least one of its contact structures. The blocking structure is adapted to prevent minority carriers generated within the adjacent contact structure from reaching the absorption region, and may also prevent minority carriers generated within the absorption region near the contact structure from entering the contact structure. Majority carriers, on the other hand, may be substantially unimpeded by the blocking structure in moving from the absorption region to the contact structure. In an embodiment, the blocking structure has a higher effective energy gap than its adjacent contact structure and than the absorption region. The interface between the blocking structure and the absorption region may be graded, so that the effective energy gap decreases gradually between the blocking structure and the absorption region.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.