Magnetoresistive head containing oxide layer
US6603643B2 · kind B2 · utility
5Cited by
4References
4Claims
0Family size
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Key dates
| Filing date | Oct 5, 2001 |
| Grant date | Aug 5, 2003 |
| Priority date | — |
| Expiry date | Oct 5, 2021 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11B2005/3996
- WIPO fieldAudio-visual technology
- WIPO sectorElectrical engineering
Abstract
An oxide layer and an antiparallel coupling layer are inserted into a ferromagnetic pinned layer to be subjected to heat treatment with appropriate ferromagnetic film thickness and magnetization field to form a spin-valve film, which is controlled in amount of magnetization and is high in magnetoresistance.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.