Optical recording medium
US6605328B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 22, 2001 |
| Grant date | Aug 12, 2003 |
| Priority date | — |
| Expiry date | Jun 27, 2021 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T428/21
- WIPO fieldAudio-visual technology
- WIPO sectorElectrical engineering
Abstract
In an optical recording medium comprising a phase change recording layer (4) containing Sb and optionally, Te and/or In as a main component, the recording layer is able to be crystallized to provide a crystallized region which contains rhombohedral crystals consisting essentially of Sb and is substantially free of a crystal phase other than the rhombohedral crystals. When the recording layer contains a rare earth element, Zr, Hf, Ti or Sn as an auxiliary component, the medium has a dielectric layer (31) composed of silicon oxide, silicon nitride, aluminum oxide, or a mixture of zinc sulfide and at least 30 mol % of silicon oxide, disposed contiguous to and in front of the recording layer (4) as viewed from the recording/reading beam incident side. The medium has a high transfer rate and improved thermal stability.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.