Process for monitoring the thickness of layers in a microelectronic device
US6605482B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Oct 11, 2001 |
| Grant date | Aug 12, 2003 |
| Priority date | — |
| Expiry date | Oct 11, 2021 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG01N21/55
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
A method of determining the thickness of a thickness of a first layer of material in a semiconductor device using a reflectometer, the first layer of material being disposed outwardly from a second layer of material, the first and second layer of material both including silicon. The method includes generating at least one predicted behavior curve associated with a depth profile of an interface between the first and second layer of material, the predicted behavior curve including at least one expected optical measurement, the depth profile associated with the interface being present at a particular theoretical depth. The method also includes emitting light onto a surface of the semiconductor device. The method further includes collecting at least one optical measurement from portions of the emitted light that are reflected by the semiconductor device. The method additionally includes comparing the at least one optical measurement to the predicted behavior curve and determining the approximate actual depth of the interface in response to the compared optical measurement.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.